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| SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - JANUARY 1996 FEATURES * 60 Volt VCEO 2N7002 S D PARTMARKING DETAIL - 702 G ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25C Pulsed Drain Current Gate-Source Voltage Power Dissipation at T amb=25C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot T j:T stg VALUE 60 115 800 40 330 -55 to +150 SOT23 UNIT V mA mA V mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Voltage (1) Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(2) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Time (2)(3) Turn-Off Time (2)(3) SYMBOL MIN. BV DSS V GS(th) I GSS I DSS I D(on) V DS(on) R DS(on) g fs C iss C oss C rss t (on) t (off) 80 50 25 5 20 20 500 3.75 375 7.5 7.5 60 1 2.5 10 1 500 MAX. UNIT CONDITIONS. V V nA A A mA V mV mS pF pF pF ns ns V DD 30V, I D=200mA R g=25, R L=150 V DS=25V, V GS=0V, f=1MHz I D=10A, V GS=0V I D =250mA, V DS= V GS V GS= 20V, V DS=0V V DS=48V, V GS=0V V DS=48V, V GS=0V, T=125C(2) V DS=25V, V GS=10V V GS=10V, I D=500mA V GS=5V, I D=50mA V GS=10V, I D=500mA V GS=5V, I D=50mA V DS=25V, I D=500mA (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator Spice parameter data is available upon request for this device 3-2 |
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